Storage element and memory
A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage...
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| creator | Ohmori, Hiroyuki Oishi, Yuki Higo, Yutaka Bessho, Kazuhiro Yamane, Kazutaka Hosomi, Masanori Kano, Hiroshi Yamamoto, Tetsuya |
| description | A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides. |
| format | Patent |
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and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | Storage element and memory |
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