Usage metering by bias temperature instability
Techniques for usage metering by bias temperature instability with differential sensing on pairs of matching transistors are provided. In one aspect, a usage metering device includes: at least one metering circuit on a chip, the at least one metering circuit having a pair of matching transistors, an...
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| creator | Leobandung, Effendi |
| description | Techniques for usage metering by bias temperature instability with differential sensing on pairs of matching transistors are provided. In one aspect, a usage metering device includes: at least one metering circuit on a chip, the at least one metering circuit having a pair of matching transistors, and a differential current sense circuit connected to the pair of matching transistors, wherein the pair of matching transistors includes a reference transistor which is unused during regular operation of the chip, and a stressed transistor that is on continuously during the regular operation of the chip, and wherein the differential current sense circuit determines a Vt difference between the reference transistor and the stressed transistor. A method for usage metering and a method of forming a usage metering device are also provided. |
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In one aspect, a usage metering device includes: at least one metering circuit on a chip, the at least one metering circuit having a pair of matching transistors, and a differential current sense circuit connected to the pair of matching transistors, wherein the pair of matching transistors includes a reference transistor which is unused during regular operation of the chip, and a stressed transistor that is on continuously during the regular operation of the chip, and wherein the differential current sense circuit determines a Vt difference between the reference transistor and the stressed transistor. A method for usage metering and a method of forming a usage metering device are also provided.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231205&DB=EPODOC&CC=US&NR=11835572B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231205&DB=EPODOC&CC=US&NR=11835572B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Leobandung, Effendi</creatorcontrib><title>Usage metering by bias temperature instability</title><description>Techniques for usage metering by bias temperature instability with differential sensing on pairs of matching transistors are provided. In one aspect, a usage metering device includes: at least one metering circuit on a chip, the at least one metering circuit having a pair of matching transistors, and a differential current sense circuit connected to the pair of matching transistors, wherein the pair of matching transistors includes a reference transistor which is unused during regular operation of the chip, and a stressed transistor that is on continuously during the regular operation of the chip, and wherein the differential current sense circuit determines a Vt difference between the reference transistor and the stressed transistor. A method for usage metering and a method of forming a usage metering device are also provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALLU5MT1XITS1JLcrMS1dIqlRIykwsVihJzS1ILUosKS1KVcjMKy5JTMrMySyp5GFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhoYWxqam5kZORsbEqAEAGX8rDQ</recordid><startdate>20231205</startdate><enddate>20231205</enddate><creator>Leobandung, Effendi</creator><scope>EVB</scope></search><sort><creationdate>20231205</creationdate><title>Usage metering by bias temperature instability</title><author>Leobandung, Effendi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11835572B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Leobandung, Effendi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Leobandung, Effendi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Usage metering by bias temperature instability</title><date>2023-12-05</date><risdate>2023</risdate><abstract>Techniques for usage metering by bias temperature instability with differential sensing on pairs of matching transistors are provided. In one aspect, a usage metering device includes: at least one metering circuit on a chip, the at least one metering circuit having a pair of matching transistors, and a differential current sense circuit connected to the pair of matching transistors, wherein the pair of matching transistors includes a reference transistor which is unused during regular operation of the chip, and a stressed transistor that is on continuously during the regular operation of the chip, and wherein the differential current sense circuit determines a Vt difference between the reference transistor and the stressed transistor. A method for usage metering and a method of forming a usage metering device are also provided.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Usage metering by bias temperature instability |
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