Semiconductor device

A semiconductor device according to the present disclosure is an RC-IGBT in which an IGBT region 10 and a diode region 20 are provided adjacent to each other. The diode region 20 includes a p-type anode layer 25 provided on a first principal surface side of an n−-type drift layer 1, a p-type contact layer 24 provided on the first principal surface side of the p-type anode layer 25 and at a surface layer of a semiconductor substrate on the first principal surface side and connected with an emitter electrode 6, and an n+-type cathode layer 26 provided at a surface layer of the semiconductor substrate on a second principal surface side. The p-type contact layer 24 contains aluminum as p-type impurities, and the thickness of the p-type contact layer 24 is smaller than the thickness of an n+-type source layer 13 provided in the IGBT region 10.