Photovoltaic device and method for manufacturing the same

Disclosed is an interdigitated back contact photovoltaic device that includes a first patterned silicon layer situated on an intrinsic layer, and having the same type of doping as the one of the substrate. First charge collection portions are deposited on predetermined areas of the intrinsic layer,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bätzner, Derk, Strahm, Benjamin, Lachenal, Damien
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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