Ferroelectric field effect transistor devices and methods for forming the same

Ferroelectric structures, including a ferroelectric field effect transistors (FeFETs), and methods of making the same are disclosed which have improved ferroelectric properties and device performance. A FeFET device including a ferroelectric material gate dielectric layer and a metal oxide semicondu...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lin, Yu-Ming, Chen, Hai-Ching, Lin, Po-Ting, Huang, Yen-Chieh, Liao, Song-Fu
Format: Patent
Sprache:eng
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