Non-volatile memory with different word line hook up regions based on pass through signals
To overcome a shortage of area for horizontal metal lines to connect word line switch transistors to corresponding word lines and for pass through signal lines, it is proposed to implement multiple architectures for the word line hook up regions. For example, some areas of a die will be designed to...
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| creator | Toyama, Fumiaki Shao, Shiqian |
| description | To overcome a shortage of area for horizontal metal lines to connect word line switch transistors to corresponding word lines and for pass through signal lines, it is proposed to implement multiple architectures for the word line hook up regions. For example, some areas of a die will be designed to provide extra horizontal metal lines to connect word line switch transistors to word lines and other areas of the die will be designed to provide extra pass through signal lines. |
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| title | Non-volatile memory with different word line hook up regions based on pass through signals |
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