Channel formation for three dimensional transistors

Embodiments herein describe techniques for a transistor above a substrate. The transistor includes a channel layer above the substrate. The channel layer includes a first channel material of a first conductivity. In addition, the channel layer further includes elements of one or more additional mate...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sell, Bernhard, Ku, Chieh-Jen, Wang, Pei-Hua, Mitan, Martin M, Pipes, Leonard C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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