Resistive memory

A resistive memory including a substrate, a first electrode, a second electrode, a resistance changeable layer and an oxygen reservoir layer is provided. The first electrode is located on the substrate. The second electrode is located between the first electrode and the substrate. The resistance cha...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wu, Bo-Lun, Kuo, Tse-Mian, Hsu, Po-Yen
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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