Memory device comprising programmable command-and-address and/or data interfaces
A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode...
Gespeichert in:
Hauptverfasser: | , , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Ho, Fan Leibowitz, Brian S Shaeffer, Ian Richardson, Wayne S Oh, Kyung Suk Secker, David A Lai, Lawrence Bansal, Akash |
description | A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11783879B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11783879B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11783879B23</originalsourceid><addsrcrecordid>eNrjZAjwTc3NL6pUSEkty0xOVUjOzy0oyizOzEtXKCjKTy9KzM1NTMoBi-cm5qXognFKSlFqcbECkK2fX6SQkliSqJCZV5JalJaYnFrMw8CalphTnMoLpbkZFN1cQ5w9dFML8uNTiwuAavJSS-JDgw0NzS2MLcwtnYyMiVEDAMczN9M</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Memory device comprising programmable command-and-address and/or data interfaces</title><source>esp@cenet</source><creator>Ho, Fan ; Leibowitz, Brian S ; Shaeffer, Ian ; Richardson, Wayne S ; Oh, Kyung Suk ; Secker, David A ; Lai, Lawrence ; Bansal, Akash</creator><creatorcontrib>Ho, Fan ; Leibowitz, Brian S ; Shaeffer, Ian ; Richardson, Wayne S ; Oh, Kyung Suk ; Secker, David A ; Lai, Lawrence ; Bansal, Akash</creatorcontrib><description>A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231010&DB=EPODOC&CC=US&NR=11783879B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231010&DB=EPODOC&CC=US&NR=11783879B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ho, Fan</creatorcontrib><creatorcontrib>Leibowitz, Brian S</creatorcontrib><creatorcontrib>Shaeffer, Ian</creatorcontrib><creatorcontrib>Richardson, Wayne S</creatorcontrib><creatorcontrib>Oh, Kyung Suk</creatorcontrib><creatorcontrib>Secker, David A</creatorcontrib><creatorcontrib>Lai, Lawrence</creatorcontrib><creatorcontrib>Bansal, Akash</creatorcontrib><title>Memory device comprising programmable command-and-address and/or data interfaces</title><description>A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAjwTc3NL6pUSEkty0xOVUjOzy0oyizOzEtXKCjKTy9KzM1NTMoBi-cm5qXognFKSlFqcbECkK2fX6SQkliSqJCZV5JalJaYnFrMw8CalphTnMoLpbkZFN1cQ5w9dFML8uNTiwuAavJSS-JDgw0NzS2MLcwtnYyMiVEDAMczN9M</recordid><startdate>20231010</startdate><enddate>20231010</enddate><creator>Ho, Fan</creator><creator>Leibowitz, Brian S</creator><creator>Shaeffer, Ian</creator><creator>Richardson, Wayne S</creator><creator>Oh, Kyung Suk</creator><creator>Secker, David A</creator><creator>Lai, Lawrence</creator><creator>Bansal, Akash</creator><scope>EVB</scope></search><sort><creationdate>20231010</creationdate><title>Memory device comprising programmable command-and-address and/or data interfaces</title><author>Ho, Fan ; Leibowitz, Brian S ; Shaeffer, Ian ; Richardson, Wayne S ; Oh, Kyung Suk ; Secker, David A ; Lai, Lawrence ; Bansal, Akash</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11783879B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Ho, Fan</creatorcontrib><creatorcontrib>Leibowitz, Brian S</creatorcontrib><creatorcontrib>Shaeffer, Ian</creatorcontrib><creatorcontrib>Richardson, Wayne S</creatorcontrib><creatorcontrib>Oh, Kyung Suk</creatorcontrib><creatorcontrib>Secker, David A</creatorcontrib><creatorcontrib>Lai, Lawrence</creatorcontrib><creatorcontrib>Bansal, Akash</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ho, Fan</au><au>Leibowitz, Brian S</au><au>Shaeffer, Ian</au><au>Richardson, Wayne S</au><au>Oh, Kyung Suk</au><au>Secker, David A</au><au>Lai, Lawrence</au><au>Bansal, Akash</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Memory device comprising programmable command-and-address and/or data interfaces</title><date>2023-10-10</date><risdate>2023</risdate><abstract>A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US11783879B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
title | Memory device comprising programmable command-and-address and/or data interfaces |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T15%3A53%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ho,%20Fan&rft.date=2023-10-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11783879B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |