Semiconductor device and manufacturing method thereof

A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the...

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Hauptverfasser:	Li, Chung-Ting, Li, Hou-Ju, Lin, Yu-Chang, Chen, Hung-Ming, Lu, Jen-Hsiang, Tsao, Chih-Pin
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Li, Chung-Ting Li, Hou-Ju Lin, Yu-Chang Chen, Hung-Ming Lu, Jen-Hsiang Tsao, Chih-Pin
description	A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the substrate on one side of the gate spacer opposite to the gate structure; and forming an epitaxy feature in the recess of the substrate.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Semiconductor device and manufacturing method thereof
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