Light-emitting diode packaging structure and method for fabricating the same
A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is forme...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Liu, Ai Sen Feng, Hsiang An Tu, Chia Wei Chen, Ya Li Chung, Cheng Yu |
description | A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is formed on the surface of each semiconductor substrate and the inner surfaces of the first through hole, the first sub-through hole, and the second sub-through hole. A patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulation layer is formed in the first through hole and the second through hole and electrically connected to the patterned electrode layer. Three light-emitting diodes are respectively formed in the first sub-through holes of the second through holes of each semiconductor substrate and respectively electrically connected to the conductive material within the second through holes. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11769861B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11769861B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11769861B23</originalsourceid><addsrcrecordid>eNrjZPDxyUzPKNFNzc0sKcnMS1dIycxPSVUoSEzOTkwH8YtLikqTS0qLUhUS81IUclNLMvJTFNLyixTSEpOKMpMTwZpKMlIVihNzU3kYWNMSc4pTeaE0N4Oim2uIs4duakF-fGox0NTUvNSS-NBgQ0NzM0sLM0MnI2Ni1AAArD82Eg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Light-emitting diode packaging structure and method for fabricating the same</title><source>esp@cenet</source><creator>Liu, Ai Sen ; Feng, Hsiang An ; Tu, Chia Wei ; Chen, Ya Li ; Chung, Cheng Yu</creator><creatorcontrib>Liu, Ai Sen ; Feng, Hsiang An ; Tu, Chia Wei ; Chen, Ya Li ; Chung, Cheng Yu</creatorcontrib><description>A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is formed on the surface of each semiconductor substrate and the inner surfaces of the first through hole, the first sub-through hole, and the second sub-through hole. A patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulation layer is formed in the first through hole and the second through hole and electrically connected to the patterned electrode layer. Three light-emitting diodes are respectively formed in the first sub-through holes of the second through holes of each semiconductor substrate and respectively electrically connected to the conductive material within the second through holes.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230926&DB=EPODOC&CC=US&NR=11769861B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230926&DB=EPODOC&CC=US&NR=11769861B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Liu, Ai Sen</creatorcontrib><creatorcontrib>Feng, Hsiang An</creatorcontrib><creatorcontrib>Tu, Chia Wei</creatorcontrib><creatorcontrib>Chen, Ya Li</creatorcontrib><creatorcontrib>Chung, Cheng Yu</creatorcontrib><title>Light-emitting diode packaging structure and method for fabricating the same</title><description>A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is formed on the surface of each semiconductor substrate and the inner surfaces of the first through hole, the first sub-through hole, and the second sub-through hole. A patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulation layer is formed in the first through hole and the second through hole and electrically connected to the patterned electrode layer. Three light-emitting diodes are respectively formed in the first sub-through holes of the second through holes of each semiconductor substrate and respectively electrically connected to the conductive material within the second through holes.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDxyUzPKNFNzc0sKcnMS1dIycxPSVUoSEzOTkwH8YtLikqTS0qLUhUS81IUclNLMvJTFNLyixTSEpOKMpMTwZpKMlIVihNzU3kYWNMSc4pTeaE0N4Oim2uIs4duakF-fGox0NTUvNSS-NBgQ0NzM0sLM0MnI2Ni1AAArD82Eg</recordid><startdate>20230926</startdate><enddate>20230926</enddate><creator>Liu, Ai Sen</creator><creator>Feng, Hsiang An</creator><creator>Tu, Chia Wei</creator><creator>Chen, Ya Li</creator><creator>Chung, Cheng Yu</creator><scope>EVB</scope></search><sort><creationdate>20230926</creationdate><title>Light-emitting diode packaging structure and method for fabricating the same</title><author>Liu, Ai Sen ; Feng, Hsiang An ; Tu, Chia Wei ; Chen, Ya Li ; Chung, Cheng Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11769861B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Liu, Ai Sen</creatorcontrib><creatorcontrib>Feng, Hsiang An</creatorcontrib><creatorcontrib>Tu, Chia Wei</creatorcontrib><creatorcontrib>Chen, Ya Li</creatorcontrib><creatorcontrib>Chung, Cheng Yu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liu, Ai Sen</au><au>Feng, Hsiang An</au><au>Tu, Chia Wei</au><au>Chen, Ya Li</au><au>Chung, Cheng Yu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Light-emitting diode packaging structure and method for fabricating the same</title><date>2023-09-26</date><risdate>2023</risdate><abstract>A light-emitting diode packaging structure and a method for fabricating the same is disclosed. A semiconductor wafer is provided, which includes semiconductor substrates. Each semiconductor substrate is penetrated with a first through hole and three second through holes. An insulation layer is formed on the surface of each semiconductor substrate and the inner surfaces of the first through hole, the first sub-through hole, and the second sub-through hole. A patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulation layer is formed in the first through hole and the second through hole and electrically connected to the patterned electrode layer. Three light-emitting diodes are respectively formed in the first sub-through holes of the second through holes of each semiconductor substrate and respectively electrically connected to the conductive material within the second through holes.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US11769861B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Light-emitting diode packaging structure and method for fabricating the same |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T23%3A14%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Liu,%20Ai%20Sen&rft.date=2023-09-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11769861B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |