Resist composition, method of forming resist pattern, and acid diffusion-controlling agent
A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid. The resist composition includes a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by...
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creator | Todoroki, Seiji Shiosaki, Masahiro Michibayashi, Nobuhiro Yamazaki, Hiroto |
description | A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid. The resist composition includes a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (d0) in which Rd01 represents a monovalent organic group, Rd02 represents a single bond or a divalent linking group, m represents an integer of 1 or greater, and Mm+ represents an m-valent organic cation |
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The resist composition includes a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (d0) in which Rd01 represents a monovalent organic group, Rd02 represents a single bond or a divalent linking group, m represents an integer of 1 or greater, and Mm+ represents an m-valent organic cation</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230919&DB=EPODOC&CC=US&NR=11762288B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230919&DB=EPODOC&CC=US&NR=11762288B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Todoroki, Seiji</creatorcontrib><creatorcontrib>Shiosaki, Masahiro</creatorcontrib><creatorcontrib>Michibayashi, Nobuhiro</creatorcontrib><creatorcontrib>Yamazaki, Hiroto</creatorcontrib><title>Resist composition, method of forming resist pattern, and acid diffusion-controlling agent</title><description>A resist composition that generates an acid upon exposure and whose solubility in a developing solution is changed by action of an acid. 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The resist composition includes a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (d0) in which Rd01 represents a monovalent organic group, Rd02 represents a single bond or a divalent linking group, m represents an integer of 1 or greater, and Mm+ represents an m-valent organic cation</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
title | Resist composition, method of forming resist pattern, and acid diffusion-controlling agent |
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