Memory device and method for its operation

The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity ρ1 and ρ2 at the s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mihailovic, Dragan, Svetin, Damjan, Venturini, Rok, Mraz, Anze
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES STATIC STORES TRANSPORTING
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