Memory device and method for its operation

The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity ρ1 and ρ2 at the s...

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Hauptverfasser:	Mihailovic, Dragan, Svetin, Damjan, Venturini, Rok, Mraz, Anze
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES STATIC STORES TRANSPORTING
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creator	Mihailovic, Dragan Svetin, Damjan Venturini, Rok Mraz, Anze
description	The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity ρ1 and ρ2 at the same temperature, wherein ρ1 is different to ρ2. The superconductor element is operable so that at least part of the superconductor element is switchable from a superconducting state to a non-superconducting state. When the superconductor element is switched from the superconducting state to the non-superconducting state, a current injection is provided through the switchable resistive element capable of switching the switchable resistive element between said first and second values of electrical resistivity.
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subjects	ELECTRICITY INFORMATION STORAGE MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES STATIC STORES TRANSPORTING
title	Memory device and method for its operation
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