Method for determining corrections for lithographic apparatus

A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurali...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Rehman, Samee Ur, Werkman, Roy, Cheng, Yana, Hastings, Simon Philip Spencer, Harutyunyan, Davit, Ziebarth, Jeffrey Thomas, Lin, Chenxi, Deckers, David Frans Simon
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Rehman, Samee Ur
Werkman, Roy
Cheng, Yana
Hastings, Simon Philip Spencer
Harutyunyan, Davit
Ziebarth, Jeffrey Thomas
Lin, Chenxi
Deckers, David Frans Simon
description A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11754931B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11754931B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11754931B23</originalsourceid><addsrcrecordid>eNrjZLD1TS3JyE9RSMsvUkhJLUktys3My8xLV0jOLypKTS7JzM8rBsvlZAKVpRclFmRkJiskFhQkFiWWlBbzMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL40GBDQ3NTE0tjQycjY2LUAAByuzEV</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for determining corrections for lithographic apparatus</title><source>esp@cenet</source><creator>Rehman, Samee Ur ; Werkman, Roy ; Cheng, Yana ; Hastings, Simon Philip Spencer ; Harutyunyan, Davit ; Ziebarth, Jeffrey Thomas ; Lin, Chenxi ; Deckers, David Frans Simon</creator><creatorcontrib>Rehman, Samee Ur ; Werkman, Roy ; Cheng, Yana ; Hastings, Simon Philip Spencer ; Harutyunyan, Davit ; Ziebarth, Jeffrey Thomas ; Lin, Chenxi ; Deckers, David Frans Simon</creatorcontrib><description>A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230912&amp;DB=EPODOC&amp;CC=US&amp;NR=11754931B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230912&amp;DB=EPODOC&amp;CC=US&amp;NR=11754931B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Rehman, Samee Ur</creatorcontrib><creatorcontrib>Werkman, Roy</creatorcontrib><creatorcontrib>Cheng, Yana</creatorcontrib><creatorcontrib>Hastings, Simon Philip Spencer</creatorcontrib><creatorcontrib>Harutyunyan, Davit</creatorcontrib><creatorcontrib>Ziebarth, Jeffrey Thomas</creatorcontrib><creatorcontrib>Lin, Chenxi</creatorcontrib><creatorcontrib>Deckers, David Frans Simon</creatorcontrib><title>Method for determining corrections for lithographic apparatus</title><description>A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD1TS3JyE9RSMsvUkhJLUktys3My8xLV0jOLypKTS7JzM8rBsvlZAKVpRclFmRkJiskFhQkFiWWlBbzMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL40GBDQ3NTE0tjQycjY2LUAAByuzEV</recordid><startdate>20230912</startdate><enddate>20230912</enddate><creator>Rehman, Samee Ur</creator><creator>Werkman, Roy</creator><creator>Cheng, Yana</creator><creator>Hastings, Simon Philip Spencer</creator><creator>Harutyunyan, Davit</creator><creator>Ziebarth, Jeffrey Thomas</creator><creator>Lin, Chenxi</creator><creator>Deckers, David Frans Simon</creator><scope>EVB</scope></search><sort><creationdate>20230912</creationdate><title>Method for determining corrections for lithographic apparatus</title><author>Rehman, Samee Ur ; Werkman, Roy ; Cheng, Yana ; Hastings, Simon Philip Spencer ; Harutyunyan, Davit ; Ziebarth, Jeffrey Thomas ; Lin, Chenxi ; Deckers, David Frans Simon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11754931B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>Rehman, Samee Ur</creatorcontrib><creatorcontrib>Werkman, Roy</creatorcontrib><creatorcontrib>Cheng, Yana</creatorcontrib><creatorcontrib>Hastings, Simon Philip Spencer</creatorcontrib><creatorcontrib>Harutyunyan, Davit</creatorcontrib><creatorcontrib>Ziebarth, Jeffrey Thomas</creatorcontrib><creatorcontrib>Lin, Chenxi</creatorcontrib><creatorcontrib>Deckers, David Frans Simon</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rehman, Samee Ur</au><au>Werkman, Roy</au><au>Cheng, Yana</au><au>Hastings, Simon Philip Spencer</au><au>Harutyunyan, Davit</au><au>Ziebarth, Jeffrey Thomas</au><au>Lin, Chenxi</au><au>Deckers, David Frans Simon</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for determining corrections for lithographic apparatus</title><date>2023-09-12</date><risdate>2023</risdate><abstract>A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11754931B2
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
title Method for determining corrections for lithographic apparatus
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T07%3A06%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Rehman,%20Samee%20Ur&rft.date=2023-09-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11754931B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true