Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film
To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas.A cobalt complex represented by the following formula (1):wherein L1 and L2 represent a unidentate amide ligand of the following formula...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Hayakawa, Teppei Yamamoto, Yuki Oike, Hiroyuki Tada, Ken-ichi Furukawa, Taishi |
| description | To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas.A cobalt complex represented by the following formula (1):wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C):wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom;wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group;wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11753429B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11753429B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11753429B23</originalsourceid><addsrcrecordid>eNqNjLEKwjAQQLs4iPoP594ObZXialHc1bmc6aUNJHehuYKfL4qr4PTg8XjLbGjlgV7BSIienjkE0lF6sDJBQJ4tGp0nxwMkDJQDcv87MZ9XYYQVHb-Njo7BOh_W2cKiT7T5cpVtz6dbeykoSkcpoiEm7e7Xsmz29a46HKv6n-YFrQVAHw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film</title><source>esp@cenet</source><creator>Hayakawa, Teppei ; Yamamoto, Yuki ; Oike, Hiroyuki ; Tada, Ken-ichi ; Furukawa, Taishi</creator><creatorcontrib>Hayakawa, Teppei ; Yamamoto, Yuki ; Oike, Hiroyuki ; Tada, Ken-ichi ; Furukawa, Taishi</creatorcontrib><description>To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas.A cobalt complex represented by the following formula (1):wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C):wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom;wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group;wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.</description><language>eng</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230912&DB=EPODOC&CC=US&NR=11753429B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230912&DB=EPODOC&CC=US&NR=11753429B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hayakawa, Teppei</creatorcontrib><creatorcontrib>Yamamoto, Yuki</creatorcontrib><creatorcontrib>Oike, Hiroyuki</creatorcontrib><creatorcontrib>Tada, Ken-ichi</creatorcontrib><creatorcontrib>Furukawa, Taishi</creatorcontrib><title>Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film</title><description>To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas.A cobalt complex represented by the following formula (1):wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C):wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom;wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group;wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAQQLs4iPoP594ObZXialHc1bmc6aUNJHehuYKfL4qr4PTg8XjLbGjlgV7BSIienjkE0lF6sDJBQJ4tGp0nxwMkDJQDcv87MZ9XYYQVHb-Njo7BOh_W2cKiT7T5cpVtz6dbeykoSkcpoiEm7e7Xsmz29a46HKv6n-YFrQVAHw</recordid><startdate>20230912</startdate><enddate>20230912</enddate><creator>Hayakawa, Teppei</creator><creator>Yamamoto, Yuki</creator><creator>Oike, Hiroyuki</creator><creator>Tada, Ken-ichi</creator><creator>Furukawa, Taishi</creator><scope>EVB</scope></search><sort><creationdate>20230912</creationdate><title>Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film</title><author>Hayakawa, Teppei ; Yamamoto, Yuki ; Oike, Hiroyuki ; Tada, Ken-ichi ; Furukawa, Taishi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11753429B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Hayakawa, Teppei</creatorcontrib><creatorcontrib>Yamamoto, Yuki</creatorcontrib><creatorcontrib>Oike, Hiroyuki</creatorcontrib><creatorcontrib>Tada, Ken-ichi</creatorcontrib><creatorcontrib>Furukawa, Taishi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hayakawa, Teppei</au><au>Yamamoto, Yuki</au><au>Oike, Hiroyuki</au><au>Tada, Ken-ichi</au><au>Furukawa, Taishi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film</title><date>2023-09-12</date><risdate>2023</risdate><abstract>To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas.A cobalt complex represented by the following formula (1):wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C):wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom;wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group;wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US11753429B2 |
| source | esp@cenet |
| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Cobalt complex, method for manufacturing same, and method for manufacturing cobalt-containing thin film |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T18%3A58%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Hayakawa,%20Teppei&rft.date=2023-09-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11753429B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |