Self-aligned inner spacer on gate-all-around structure and methods of forming the same

Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer comprising different semiconductor ma...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lee, Pei-Wei, Hung, Tsungyu, Tsai, Pang-Yen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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