System and method for thermally calibrating semiconductor process chambers
A system and method for thermally calibrating semiconductor process chambers is disclosed. In various embodiments, a first non-contact temperature sensor can be calibrated to obtain a first reading with the semiconductor process chamber. The first reading can be representative of a first temperature...
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| creator | Kim, Hyeongeu Leow, Yen Lin Miskin, Caleb Koy |
| description | A system and method for thermally calibrating semiconductor process chambers is disclosed. In various embodiments, a first non-contact temperature sensor can be calibrated to obtain a first reading with the semiconductor process chamber. The first reading can be representative of a first temperature at a first location. The first non-contact temperature sensor can be used to obtain a second reading representative of a second temperature of an external thermal radiation source. The second temperature of the external thermal radiation source can be adjusted to a first temperature setting of the external radiation source such that the second reading substantially matches the first reading. Additional non-contact temperature sensor(s) can be directed at the external thermal radiation source and can be adjusted such that the reading(s) of the additional non-contact sensors are calibrated and matched to one another. |
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In various embodiments, a first non-contact temperature sensor can be calibrated to obtain a first reading with the semiconductor process chamber. The first reading can be representative of a first temperature at a first location. The first non-contact temperature sensor can be used to obtain a second reading representative of a second temperature of an external thermal radiation source. The second temperature of the external thermal radiation source can be adjusted to a first temperature setting of the external radiation source such that the second reading substantially matches the first reading. Additional non-contact temperature sensor(s) can be directed at the external thermal radiation source and can be adjusted such that the reading(s) of the additional non-contact sensors are calibrated and matched to one another.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COLORIMETRY ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; METALLURGY ; PHYSICS ; RADIATION PYROMETRY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230905&DB=EPODOC&CC=US&NR=11747209B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230905&DB=EPODOC&CC=US&NR=11747209B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Hyeongeu</creatorcontrib><creatorcontrib>Leow, Yen Lin</creatorcontrib><creatorcontrib>Miskin, Caleb Koy</creatorcontrib><title>System and method for thermally calibrating semiconductor process chambers</title><description>A system and method for thermally calibrating semiconductor process chambers is disclosed. In various embodiments, a first non-contact temperature sensor can be calibrated to obtain a first reading with the semiconductor process chamber. The first reading can be representative of a first temperature at a first location. The first non-contact temperature sensor can be used to obtain a second reading representative of a second temperature of an external thermal radiation source. The second temperature of the external thermal radiation source can be adjusted to a first temperature setting of the external radiation source such that the second reading substantially matches the first reading. Additional non-contact temperature sensor(s) can be directed at the external thermal radiation source and can be adjusted such that the reading(s) of the additional non-contact sensors are calibrated and matched to one another.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COLORIMETRY</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</subject><subject>MEASURING</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>RADIATION PYROMETRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjsKwkAQANA0FqLeYTyAYKIQbBVFbKN1mMxOsgv7Y2cscnstPIDVa96yenSzKAfAaCCw2mRgTAXUcgno_QyE3g0F1cUJhIOjFM2b9HtyScQiQBbDwEXW1WJEL7z5uaq2t-vzct9xTj1LRuLI2r-6um6PbbM_nZvDP-cDdLk1-A</recordid><startdate>20230905</startdate><enddate>20230905</enddate><creator>Kim, Hyeongeu</creator><creator>Leow, Yen Lin</creator><creator>Miskin, Caleb Koy</creator><scope>EVB</scope></search><sort><creationdate>20230905</creationdate><title>System and method for thermally calibrating semiconductor process chambers</title><author>Kim, Hyeongeu ; Leow, Yen Lin ; Miskin, Caleb Koy</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11747209B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COLORIMETRY</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</topic><topic>MEASURING</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>RADIATION PYROMETRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Hyeongeu</creatorcontrib><creatorcontrib>Leow, Yen Lin</creatorcontrib><creatorcontrib>Miskin, Caleb Koy</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Hyeongeu</au><au>Leow, Yen Lin</au><au>Miskin, Caleb Koy</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>System and method for thermally calibrating semiconductor process chambers</title><date>2023-09-05</date><risdate>2023</risdate><abstract>A system and method for thermally calibrating semiconductor process chambers is disclosed. In various embodiments, a first non-contact temperature sensor can be calibrated to obtain a first reading with the semiconductor process chamber. The first reading can be representative of a first temperature at a first location. The first non-contact temperature sensor can be used to obtain a second reading representative of a second temperature of an external thermal radiation source. The second temperature of the external thermal radiation source can be adjusted to a first temperature setting of the external radiation source such that the second reading substantially matches the first reading. Additional non-contact temperature sensor(s) can be directed at the external thermal radiation source and can be adjusted such that the reading(s) of the additional non-contact sensors are calibrated and matched to one another.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COLORIMETRY DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING METALLURGY PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING |
| title | System and method for thermally calibrating semiconductor process chambers |
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