Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer

Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer

Semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend sid...

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Hauptverfasser: Yang, Kiyeon, Lee, Changseung, Ahn, Dongho
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ELECTRICITY
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creator Yang, Kiyeon
Lee, Changseung
Ahn, Dongho
description Semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
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title Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer
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