Method of manufacturing photomask set for forming patterns
A method of manufacturing a photomask set includes: preparing a mask layout, the mask layout including a plurality of first layout patterns apart from one another in a first region, wherein distances between center points of three first layout patterns adjacent to one another from among the pluralit...
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| creator | Ahn, Hungbae Park, Sangoh Jung, Sunggon |
| description | A method of manufacturing a photomask set includes: preparing a mask layout, the mask layout including a plurality of first layout patterns apart from one another in a first region, wherein distances between center points of three first layout patterns adjacent to one another from among the plurality of first layout patterns respectively have different values; grouping pairs of first layout patterns, in which a distance between two first layout patterns adjacent to each other does not have a smallest value, and splitting the mask layout pattern into at least two mask layouts; and forming a photomask set including at least two photomasks each including a mask pattern corresponding to the first layout pattern included in each of the mask layout patterns split into at least two mask layouts. |
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grouping pairs of first layout patterns, in which a distance between two first layout patterns adjacent to each other does not have a smallest value, and splitting the mask layout pattern into at least two mask layouts; and forming a photomask set including at least two photomasks each including a mask pattern corresponding to the first layout pattern included in each of the mask layout patterns split into at least two mask layouts.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230829&DB=EPODOC&CC=US&NR=11740553B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25546,76297</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230829&DB=EPODOC&CC=US&NR=11740553B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ahn, Hungbae</creatorcontrib><creatorcontrib>Park, Sangoh</creatorcontrib><creatorcontrib>Jung, Sunggon</creatorcontrib><title>Method of manufacturing photomask set for forming patterns</title><description>A method of manufacturing a photomask set includes: preparing a mask layout, the mask layout including a plurality of first layout patterns apart from one another in a first region, wherein distances between center points of three first layout patterns adjacent to one another from among the plurality of first layout patterns respectively have different values; grouping pairs of first layout patterns, in which a distance between two first layout patterns adjacent to each other does not have a smallest value, and splitting the mask layout pattern into at least two mask layouts; and forming a photomask set including at least two photomasks each including a mask pattern corresponding to the first layout pattern included in each of the mask layout patterns split into at least two mask layouts.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDyTS3JyE9RyE9TyE3MK01LTC4pLcrMS1coyMgvyc9NLM5WKE4tUUjLLwLhXLBMYklJalFeMQ8Da1piTnEqL5TmZlB0cw1x9tBNLciPTy0uSExOzUstiQ8NNjQ0NzEwNTV2MjImRg0AqPsvnw</recordid><startdate>20230829</startdate><enddate>20230829</enddate><creator>Ahn, Hungbae</creator><creator>Park, Sangoh</creator><creator>Jung, Sunggon</creator><scope>EVB</scope></search><sort><creationdate>20230829</creationdate><title>Method of manufacturing photomask set for forming patterns</title><author>Ahn, Hungbae ; 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grouping pairs of first layout patterns, in which a distance between two first layout patterns adjacent to each other does not have a smallest value, and splitting the mask layout pattern into at least two mask layouts; and forming a photomask set including at least two photomasks each including a mask pattern corresponding to the first layout pattern included in each of the mask layout patterns split into at least two mask layouts.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Method of manufacturing photomask set for forming patterns |
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