Semiconductor device and fabrication method thereof

The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-V material layer, a first gate, a second gate, and a first passivation layer. The first gate and the second gate are on the III-V material layer. The first passivation lay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chen, Zu Er, Gao, Wuhao, Zhao, Qiyue
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!