Integrated circuit device and method of manufacturing the same

An integrated circuit device includes: a fin-type active area including a fin top surface on a top portion and an anti-punch-through recess having a lowermost level lower than a level of the fin top surface; a nanosheet stack facing the fin top surface, the nanosheet stack including a plurality of n...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bae, Dong-il, Son, Nak-jin
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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