Silicon carbide diode with reduced voltage drop, and manufacturing method thereof

Silicon carbide diode with reduced voltage drop, and manufacturing method thereof

An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface p...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Rascuna, Simone, Chibbaro, Claudio
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Rascuna, Simone
Chibbaro, Claudio
description An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11715769B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11715769B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11715769B23</originalsourceid><addsrcrecordid>eNqNijEOwjAMALMwIOAPZochIKi6gkCsqDBXJnaaSG0cpQl8nw48gOVuuJure-N7bySAwfTyxEBeJn58dpCYimGCt_QZuykliRvAQDBgKBZNLsmHDgbOTgiy48Ril2pmsR959fNCra-Xx_m25SgtjxENB87ts9G60ofqWJ92-3-eL8oCN9Y</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Silicon carbide diode with reduced voltage drop, and manufacturing method thereof</title><source>esp@cenet</source><creator>Rascuna, Simone ; Chibbaro, Claudio</creator><creatorcontrib>Rascuna, Simone ; Chibbaro, Claudio</creatorcontrib><description>An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230801&amp;DB=EPODOC&amp;CC=US&amp;NR=11715769B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230801&amp;DB=EPODOC&amp;CC=US&amp;NR=11715769B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Rascuna, Simone</creatorcontrib><creatorcontrib>Chibbaro, Claudio</creatorcontrib><title>Silicon carbide diode with reduced voltage drop, and manufacturing method thereof</title><description>An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNijEOwjAMALMwIOAPZochIKi6gkCsqDBXJnaaSG0cpQl8nw48gOVuuJure-N7bySAwfTyxEBeJn58dpCYimGCt_QZuykliRvAQDBgKBZNLsmHDgbOTgiy48Ril2pmsR959fNCra-Xx_m25SgtjxENB87ts9G60ofqWJ92-3-eL8oCN9Y</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>Rascuna, Simone</creator><creator>Chibbaro, Claudio</creator><scope>EVB</scope></search><sort><creationdate>20230801</creationdate><title>Silicon carbide diode with reduced voltage drop, and manufacturing method thereof</title><author>Rascuna, Simone ; Chibbaro, Claudio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11715769B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Rascuna, Simone</creatorcontrib><creatorcontrib>Chibbaro, Claudio</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rascuna, Simone</au><au>Chibbaro, Claudio</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Silicon carbide diode with reduced voltage drop, and manufacturing method thereof</title><date>2023-08-01</date><risdate>2023</risdate><abstract>An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US11715769B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Silicon carbide diode with reduced voltage drop, and manufacturing method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T00%3A06%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Rascuna,%20Simone&rft.date=2023-08-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11715769B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true