Memory device, memory system having the same, and write method thereof

A memory device includes: a first wafer including a first substrate, a plurality of first electrode layers and a plurality of first interlayer dielectric layers alternately stacked along first vertical channels projecting in a vertical direction on a top surface of the first substrate, and a dielect...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Oh, Sung Lae, Park, Sang Woo, Chae, Dong Hyuk, Kim, Ki Soo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
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