Method of fabricating semiconductor device

A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kim, Daehyun, Im, Dong-Hyun, Lee, Kibum, We, Ju Hyung, Yoon, Sungmi
Format: Patent
Sprache:eng
Schlagworte:
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