IC with 3D metal-insulator-metal capacitor

An integrated circuit (IC) including a semiconductor surface layer of a substrate including functional circuitry having circuit elements formed in the semiconductor surface layer configured together with a Metal-Insulator-Metal capacitor (MIM) capacitor on the semiconductor surface layer for realizi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Bu, Haowen, Visokay, Mark Robert, Colombo, Luigi, Dey, Sagnik, Campbell, John Paul, Summerfelt, Scott Robert, Fernandes, Poornika
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:An integrated circuit (IC) including a semiconductor surface layer of a substrate including functional circuitry having circuit elements formed in the semiconductor surface layer configured together with a Metal-Insulator-Metal capacitor (MIM) capacitor on the semiconductor surface layer for realizing at least one circuit function. The MIM capacitor includes a multilevel bottom capacitor plate having an upper top surface, a lower top surface, and sidewall surfaces that connect the upper and lower top surfaces (e.g., a bottom plate layer on a three-dimensional (3D) layer or the bottom capacitor plate being a 3D bottom capacitor plate). At least one capacitor dielectric layer is on the bottom capacitor plate. A top capacitor plate is on the capacitor dielectric layer, and there are contacts through a pre-metal dielectric layer to contact the top capacitor plate and the bottom capacitor plate.