Methods of making flip chip micro light emitting diodes
A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of d...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Ng, Wee-Hong Mah, Pei-Chee Wong, Chee Chung James Soh, Geok Joo Teo, Yeow Meng |
description | A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11705534B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11705534B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11705534B23</originalsourceid><addsrcrecordid>eNrjZDD3TS3JyE8pVshPU8hNzM7MS1dIy8ksUEjOABK5mclF-Qo5mekZJQqpuZklJSDplMz8lNRiHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oSHxpsaGhuYGpqbOJkZEyMGgCtMy3A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Methods of making flip chip micro light emitting diodes</title><source>esp@cenet</source><creator>Ng, Wee-Hong ; Mah, Pei-Chee ; Wong, Chee Chung James ; Soh, Geok Joo ; Teo, Yeow Meng</creator><creatorcontrib>Ng, Wee-Hong ; Mah, Pei-Chee ; Wong, Chee Chung James ; Soh, Geok Joo ; Teo, Yeow Meng</creatorcontrib><description>A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230718&DB=EPODOC&CC=US&NR=11705534B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230718&DB=EPODOC&CC=US&NR=11705534B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ng, Wee-Hong</creatorcontrib><creatorcontrib>Mah, Pei-Chee</creatorcontrib><creatorcontrib>Wong, Chee Chung James</creatorcontrib><creatorcontrib>Soh, Geok Joo</creatorcontrib><creatorcontrib>Teo, Yeow Meng</creatorcontrib><title>Methods of making flip chip micro light emitting diodes</title><description>A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD3TS3JyE8pVshPU8hNzM7MS1dIy8ksUEjOABK5mclF-Qo5mekZJQqpuZklJSDplMz8lNRiHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oSHxpsaGhuYGpqbOJkZEyMGgCtMy3A</recordid><startdate>20230718</startdate><enddate>20230718</enddate><creator>Ng, Wee-Hong</creator><creator>Mah, Pei-Chee</creator><creator>Wong, Chee Chung James</creator><creator>Soh, Geok Joo</creator><creator>Teo, Yeow Meng</creator><scope>EVB</scope></search><sort><creationdate>20230718</creationdate><title>Methods of making flip chip micro light emitting diodes</title><author>Ng, Wee-Hong ; Mah, Pei-Chee ; Wong, Chee Chung James ; Soh, Geok Joo ; Teo, Yeow Meng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11705534B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Ng, Wee-Hong</creatorcontrib><creatorcontrib>Mah, Pei-Chee</creatorcontrib><creatorcontrib>Wong, Chee Chung James</creatorcontrib><creatorcontrib>Soh, Geok Joo</creatorcontrib><creatorcontrib>Teo, Yeow Meng</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ng, Wee-Hong</au><au>Mah, Pei-Chee</au><au>Wong, Chee Chung James</au><au>Soh, Geok Joo</au><au>Teo, Yeow Meng</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods of making flip chip micro light emitting diodes</title><date>2023-07-18</date><risdate>2023</risdate><abstract>A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US11705534B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Methods of making flip chip micro light emitting diodes |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T22%3A21%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ng,%20Wee-Hong&rft.date=2023-07-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11705534B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |