Methods of making flip chip micro light emitting diodes

A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of d...

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Hauptverfasser: Ng, Wee-Hong, Mah, Pei-Chee, Wong, Chee Chung James, Soh, Geok Joo, Teo, Yeow Meng
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creator Ng, Wee-Hong
Mah, Pei-Chee
Wong, Chee Chung James
Soh, Geok Joo
Teo, Yeow Meng
description A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Methods of making flip chip micro light emitting diodes
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