Heterojunction bipolar transistor

A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the ba...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Umemoto, Yasunari, Koya, Shigeki, Obu, Isao
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	Umemoto, Yasunari Koya, Shigeki Obu, Isao
description	A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer. An electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11705509B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11705509B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11705509B23</originalsourceid><addsrcrecordid>eNrjZFD0SC1JLcrPKs1LLsnMz1NIyizIz0ksUigpSswrziwuyS_iYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGhuYGpqYGlk5GxsSoAQDSBiaH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Heterojunction bipolar transistor</title><source>esp@cenet</source><creator>Umemoto, Yasunari ; Koya, Shigeki ; Obu, Isao</creator><creatorcontrib>Umemoto, Yasunari ; Koya, Shigeki ; Obu, Isao</creatorcontrib><description>A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer. An electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.</description><language>eng</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230718&DB=EPODOC&CC=US&NR=11705509B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230718&DB=EPODOC&CC=US&NR=11705509B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Umemoto, Yasunari</creatorcontrib><creatorcontrib>Koya, Shigeki</creatorcontrib><creatorcontrib>Obu, Isao</creatorcontrib><title>Heterojunction bipolar transistor</title><description>A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer. An electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD0SC1JLcrPKs1LLsnMz1NIyizIz0ksUigpSswrziwuyS_iYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGhuYGpqYGlk5GxsSoAQDSBiaH</recordid><startdate>20230718</startdate><enddate>20230718</enddate><creator>Umemoto, Yasunari</creator><creator>Koya, Shigeki</creator><creator>Obu, Isao</creator><scope>EVB</scope></search><sort><creationdate>20230718</creationdate><title>Heterojunction bipolar transistor</title><author>Umemoto, Yasunari ; Koya, Shigeki ; Obu, Isao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11705509B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Umemoto, Yasunari</creatorcontrib><creatorcontrib>Koya, Shigeki</creatorcontrib><creatorcontrib>Obu, Isao</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Umemoto, Yasunari</au><au>Koya, Shigeki</au><au>Obu, Isao</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Heterojunction bipolar transistor</title><date>2023-07-18</date><risdate>2023</risdate><abstract>A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer. An electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US11705509B2
source	esp@cenet
subjects	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Heterojunction bipolar transistor
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T17%3A12%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Umemoto,%20Yasunari&rft.date=2023-07-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11705509B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true