Semiconductor device including fin-FET and misaligned source and drain contacts

A semiconductor device including a fin field effect transistor (fin-FET) includes active fins disposed on a substrate, isolation layers on both sides of the active fins, a gate structure formed to cross the active fins and the isolation layers, source/drain regions on the active fins on sidewalls of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bae, Dong Il, Song, Seung Min, Noh, Chang Woo, Bae, Geum Jong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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