Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor
The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential b...
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| creator | Kim, Sang Sig Woo, Sol A Cho, Kyoung Ah Lim, Doo Hyeok Park, Young Soo Cho, Jin Sun |
| description | The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor. |
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According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PULSE TECHNIQUE ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230711&DB=EPODOC&CC=US&NR=11699721B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230711&DB=EPODOC&CC=US&NR=11699721B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Sang Sig</creatorcontrib><creatorcontrib>Woo, Sol A</creatorcontrib><creatorcontrib>Cho, Kyoung Ah</creatorcontrib><creatorcontrib>Lim, Doo Hyeok</creatorcontrib><creatorcontrib>Park, Young Soo</creatorcontrib><creatorcontrib>Cho, Jin Sun</creatorcontrib><title>Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor</title><description>The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PULSE TECHNIQUE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOAiEQRuFtLIx6h_EAFKyJZluNRmvdeoPwQ4hk2MBwfzXxADbvNd-yG28sCMUIlGGnfCwgRiuZycZiWxRqNXKgbxJU-EhHHnBPY1_kI5JT8B5WSIrhGqvksu4W3qSKze-rbns5P05XhTlPqLOxYMg03rXeD8Oh18d-9495A_1uOa4</recordid><startdate>20230711</startdate><enddate>20230711</enddate><creator>Kim, Sang Sig</creator><creator>Woo, Sol A</creator><creator>Cho, Kyoung Ah</creator><creator>Lim, Doo Hyeok</creator><creator>Park, Young Soo</creator><creator>Cho, Jin Sun</creator><scope>EVB</scope></search><sort><creationdate>20230711</creationdate><title>Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor</title><author>Kim, Sang Sig ; Woo, Sol A ; Cho, Kyoung Ah ; Lim, Doo Hyeok ; Park, Young Soo ; Cho, Jin Sun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11699721B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PULSE TECHNIQUE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Kim, Sang Sig</creatorcontrib><creatorcontrib>Woo, Sol A</creatorcontrib><creatorcontrib>Cho, Kyoung Ah</creatorcontrib><creatorcontrib>Lim, Doo Hyeok</creatorcontrib><creatorcontrib>Park, Young Soo</creatorcontrib><creatorcontrib>Cho, Jin Sun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Sang Sig</au><au>Woo, Sol A</au><au>Cho, Kyoung Ah</au><au>Lim, Doo Hyeok</au><au>Park, Young Soo</au><au>Cho, Jin Sun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor</title><date>2023-07-11</date><risdate>2023</risdate><abstract>The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES |
| title | Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor |
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