Etching aluminum nitride or aluminum oxide to generate an aluminum ion beam

Etching aluminum nitride or aluminum oxide to generate an aluminum ion beam

An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a...

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Hauptverfasser: Colvin, Neil K, Bassom, Neil, Xu, Xiao
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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creator Colvin, Neil K
Bassom, Neil
Xu, Xiao
description An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
title Etching aluminum nitride or aluminum oxide to generate an aluminum ion beam
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