Solar cell stack
A solar cell stack includes a first semiconductor solar cell having a p-n junction made of a first material with a first lattice constant, a second semiconductor solar cell having a p-n junction made of a second material with a second lattice constant, and the first lattice constant being at least 0...
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| creator | Fuhrmann, Daniel Guter, Wolfgang |
| description | A solar cell stack includes a first semiconductor solar cell having a p-n junction made of a first material with a first lattice constant, a second semiconductor solar cell having a p-n junction made of a second material with a second lattice constant, and the first lattice constant being at least 0.008 Å smaller than the second lattice constant, and a metamorphic buffer. The metamorphic buffer is formed between the first semiconductor solar cell and the second semiconductor solar cell. The metamorphic buffer includes a series of at least five layers. The lattice constant increases in the series in the direction of the semiconductor solar cell. The lattice constants of the layers of the metamorphic buffer are larger than the first lattice constant. Two layers of the buffer having a doping and the difference in the dopant concentration between the two layers being greater than 4E17 cm−3. |
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The metamorphic buffer is formed between the first semiconductor solar cell and the second semiconductor solar cell. The metamorphic buffer includes a series of at least five layers. The lattice constant increases in the series in the direction of the semiconductor solar cell. The lattice constants of the layers of the metamorphic buffer are larger than the first lattice constant. 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The metamorphic buffer is formed between the first semiconductor solar cell and the second semiconductor solar cell. The metamorphic buffer includes a series of at least five layers. The lattice constant increases in the series in the direction of the semiconductor solar cell. The lattice constants of the layers of the metamorphic buffer are larger than the first lattice constant. Two layers of the buffer having a doping and the difference in the dopant concentration between the two layers being greater than 4E17 cm−3.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Solar cell stack |
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