Method of forming first and second contacts self-aligned top source/drain region of a vertical field-effect transistor

A method of forming a semiconductor structure includes forming at least one fin disposed over a top surface of a substrate, the fin providing a vertical transport channel for a vertical transport field-effect transistor. The method also includes forming a top source/drain region disposed over a top...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Li, Juntao, Anderson, Brent A, Cheng, Kangguo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!