Stacked transistor device

Logic devices and methods of forming logic devices are described. An epitaxial channel is formed orthogonally to a horizontal plane of a substrate surface with a stack or horizontal transistors on the substrate surface. The first horizontal transistor having a first length and a first step, the seco...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Parikh, Suketu Arun, Natarajan, Sanjay
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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