Self-aligned double patterning

A method includes patterning a mandrel layer over a target layer to form first mandrels and second mandrels, the first mandrels having a larger width than the second mandrels. A spacer layer is formed over the first mandrels and the second mandrels, and altered so that a thickness of the spacer laye...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chen, Yu-Yu, Huang, Kuan-Wei, Shieh, Jyu-Horng
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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