Vertically stacked memory elements with air gap

A memory structure includes conductive lines extending horizontally in a spaced apart fashion within a vertical stack above a base or substrate. The vertical stack includes a plurality of conductive lines, the first and second conductive lines being part of the plurality. A gate structure extends ve...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mannebach, Ehren, Lilak, Aaron D, Clendenning, Scott B, Sharma, Abhishek A, Morrow, Patrick R, Ma, Sean T, Yoo, Hui Jae, Alaan, Urusa
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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