Semiconductor layer structure with a thin blocking layer

A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppres...

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Bibliographische Detailangaben

Hauptverfasser:	Liu, Ting, Djie, Hery, Li, Xing
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
Online-Zugang:	Volltext bestellen
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