Vertical memory devices including charge trapping patterns with improved retention characteristics

A vertical memory device includes a channel extending vertically on a substrate. A charge storage structure is disposed on a sidewall of the channel. Gate electrodes are spaced apart from each other vertically and surround the charge storage structure. A first insulation pattern includes an air gap...

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Bibliographische Detailangaben

Hauptverfasser:	Son, Younghwan, Lee, Suhyeong, Jeong, Sanghoon, Lim, Juyoung, Shim, Sunil
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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