Integrated circuit semiconductor device and method of manufacturing the same

An integrated circuit semiconductor device includes a first region including a first transistor and a second region in contact with the first region in a second direction. The first transistor includes a first active fin extending in a first direction, a first gate dielectric layer extending from th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lee, Jonghan, Park, Jongha, Jeong, Dabok, Lee, Jaehyun, Park, Seonghwa, Woo, Jaehoon
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!