Integrated antenna using through silicon vias

Systems and methods of manufacture are disclosed for semiconductor device assemblies having a front side metallurgy portion, a substrate layer adjacent to the front side metallurgy portion, a plurality of through-silicon-vias (TSVs) in the substrate layer, metallic conductors located within at least...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Fay, Owen R
Format:	Patent
Sprache:	eng
Schlagworte:	ANTENNAS, i.e. RADIO AERIALS BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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