Memory cells and methods for forming memory cells

Memory cells and methods for forming memory cells

According to various embodiments, there is provided a memory cell. The memory cell may include a transistor, a dielectric member, an electrode and a contact member. The dielectric member may be disposed over the transistor. The electrode may be disposed over the dielectric member. The contact member...

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Hauptverfasser: Hsieh, Curtis Chun-I, Yi, Wanbing, Jiang, Yi, Leong, Lup San, Tan, Juan Boon, Lin, Benfu
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ELECTRICITY
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creator Hsieh, Curtis Chun-I
Yi, Wanbing
Jiang, Yi
Leong, Lup San
Tan, Juan Boon
Lin, Benfu
description According to various embodiments, there is provided a memory cell. The memory cell may include a transistor, a dielectric member, an electrode and a contact member. The dielectric member may be disposed over the transistor. The electrode may be disposed over the dielectric member. The contact member has a first end and a second end opposite to the first end. The first end is disposed towards the transistor, and the second end is disposed towards the dielectric member. The contact member has a side surface extending from the first end to the second end. The second end may have a recessed end surface that has a section that slopes towards the side surface so as to form a tip with the side surface at the second end. The dielectric member may be disposed over the second end of the contact member and may include at least a portion disposed over the tip.
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title Memory cells and methods for forming memory cells
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