Substrate isolated VTFET devices

A method of forming vertical transport field effect transistor (VTFET) devices is provided. The method includes forming a plurality of vertical fins on an upper insulating layer of a dual insulator layer semiconductor-on-insulator (SeOI) substrate, and forming two masking blocks on the plurality of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Karve, Gauri, Lie, Fee Li, Bergendahl, Marc A, Miller, Eric, Cheng, Kangguo, Sporre, John
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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