Capacitor structures for memory and method of manufacturing the same

A method of manufacturing a capacitor structure of memory, including forming a patterned photoresist layer on a hard mask layer and spacers on sidewalls of the patterned photoresist layer, perform a first etch process to remove uncovered hard mask layer so as to form first patterned hard mask layer...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Huang, Kai-Jyun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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