Memory device and manufacturing method thereof

A memory device includes a substrate, a first transistor, a second transistor, and a capacitor. The first transistor is over the substrate and includes a select gate. The second transistor is over the substrate and connected to the first transistor in series, in which the second transistor includes...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Tsui, YingKit Felix, Lo, Wen-Shun, Wu, Tai-Yi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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