Semiconductor device having cap layer

A semiconductor device includes a semiconductive substrate, a semiconductive fin, an isolation structure, a source/drain epitaxial structure, a first cap layer, and a second cap layer. The semiconductive fin protrudes from the semiconductive substrate. The isolation structure is over the semiconduct...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wang, Sung-Li, Tsai, Pang-Yen, Okuno, Yasutoshi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!