Transistor device having a source region segments and body region segments

Transistor device having a source region segments and body region segments

In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus ca...

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Hauptverfasser: Ogura, Takashi, Burke, Peter A, Hiroshima, Takashi, Taniguchi, Toshimitsu
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Ogura, Takashi
Burke, Peter A
Hiroshima, Takashi
Taniguchi, Toshimitsu
description In one general aspect, an apparatus can include a first trench disposed in a semiconductor region and including a gate electrode and a second trench disposed in the semiconductor region. The apparatus can include a mesa region disposed between the first trench and the second trench. The apparatus can include a source region segment of a first conductivity type disposed in a first side of the mesa region where the source region segment is included in a plurality of source region segments and where the plurality of source region segments are aligned along the longitudinal axis. The apparatus can include a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region and having a portion disposed above the source region segment where the body region segment is included in a plurality of body region segments.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Transistor device having a source region segments and body region segments
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