Semiconductor memory device

Semiconductor memory device

A semiconductor memory device according to an embodiment includes a substrate, a source line, word lines, a pillar, an outer peripheral conductive layer, a lower layer conductive layer, and a first contact. The substrate includes a core region and a first region.The outer peripheral conductive layer...

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Hauptverfasser: Matsuura, Osamu, Watarai, Ayumi, Iwasaki, Taichi, Matsumoto, Sota, Hirotsu, Yu
Format: Patent
Sprache:eng
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ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator Matsuura, Osamu
Watarai, Ayumi
Iwasaki, Taichi
Matsumoto, Sota
Hirotsu, Yu
description A semiconductor memory device according to an embodiment includes a substrate, a source line, word lines, a pillar, an outer peripheral conductive layer, a lower layer conductive layer, and a first contact. The substrate includes a core region and a first region.The outer peripheral conductive layer is provided to surround the core region in the first region. The outer peripheral conductive layer is included in a first layer. The lower layer conductive layer is provided in the first region. The first contact is provided on the lower layer conductive layer to surround the core region in the first region. An upper end of the first contact is included in the first layer. The first contact is electrically connected to the outer peripheral conductive layer.
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subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Semiconductor memory device
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