High resistivity SOI wafers and a method of manufacturing thereof

A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided. The handle structure comprises an intermediate semiconductor layer between the handle substrate and the buried oxide layer. The intermediate semiconductor layer comprises a polyc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wang, Gang, Thomas, Shawn George, Kommu, Srikanth, Peidous, Igor
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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