Integrated electronic device with a redistribution region and a high resilience to mechanical stresses and method for its preparation

A method of manufacturing an integrated electronic device including a semiconductor body and a passivation structure including a frontal dielectric layer bounded by a frontal surface. A hole is formed extending into the frontal surface and through the frontal dielectric layer. A conductive region is...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Pipia, Francesco Maria, Venegoni, Ivan, Votta, Annamaria, Milanesi, Francesca, Colpani, Paolo, Sciarrillo, Samuele
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!