Memory device, integrated circuit device and method

A memory device includes at least one bit line, at least one word line, and at least one memory cell. The memory cell includes a first transistor, a plurality of data storage elements, and a plurality of second transistors corresponding to the plurality of data storage elements. The first transistor...

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Hauptverfasser:	Lin, Yu-Ming, Wang, Chenchen Jacob, Chia, Han-Jong, Yeong, Sai-Hooi, Lin, Meng-Han
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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creator	Lin, Yu-Ming Wang, Chenchen Jacob Chia, Han-Jong Yeong, Sai-Hooi Lin, Meng-Han
description	A memory device includes at least one bit line, at least one word line, and at least one memory cell. The memory cell includes a first transistor, a plurality of data storage elements, and a plurality of second transistors corresponding to the plurality of data storage elements. The first transistor includes a gate electrically coupled to the word line, a first source/drain, and a second source/drain. Each data storage element among the plurality of data storage elements and the corresponding second transistor are electrically coupled in series between the first source/drain of the first transistor and the bit line.
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title	Memory device, integrated circuit device and method
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